Devices including at least one intermixing layer

ABSTRACT

Devices that include a near field transducer (NFT), the NFT including a peg having five surfaces, the peg including a first material, the first material including gold (Au), silver (Ag), aluminum (Al), copper (Cu), ruthenium (Ru), rhodium (Rh), iridium (Ir), or combinations thereof; an overlying structure; and at least one intermixing layer, positioned between the peg and the overlying structure, the at least one intermixing layer positioned on at least one of the five surfaces of the peg, the intermixing layer including at least the first material and a second material.

CROSS REFERENCE TO RELATED APPLICATION

This application claims priority to U.S. patent application Ser. No.14/313,540, entitled DEVICES INCLUDING AT LEAST ONE INTERMIXING LAYER,filed on Jun. 24, 2014, and issuing as U.S. Pat. No. 8,976,634 on Mar.10, 2015, and which claims priority to U.S. Provisional Application No.61/838,407 entitled, STRUCTURES INCLUDING NEAR FIELD TRANSDUCERS ANDASSOCIATED LAYERS, filed on Jun. 24, 2013, the disclosure of which isincorporated herein by reference thereto.

SUMMARY

Disclosed are devices that include a near field transducer (NFT), theNFT including a peg having five surfaces, the peg including a firstmaterial, the first material including gold (Au), silver (Ag), aluminum(Al), copper (Cu), ruthenium (Ru), rhodium (Rh), iridium (Ir), orcombinations thereof; an overlying structure; and at least oneintermixing layer, positioned between the peg and the overlyingstructure, the at least one intermixing layer positioned on at least oneof the five surfaces of the peg, the intermixing layer including atleast the first material and a second material.

Also disclosed are devices that include a near field transducer (NFT),the NFT including a peg having five surfaces; at least one seed layer,the at least one seed layer positioned on at least one of the fivesurfaces of the peg, the seed layer including a first material, thefirst material including a metal; an overlying structure; and at leastone intermixing layer, positioned between the seed layer and theoverlying structure, the at least one intermixing layer positioned on atleast one of the five surfaces of the peg, the intermixing layercomprising at least the first material and a second material.

Also disclosed are devices that include an energy source; a near fieldtransducer (NFT), the NFT configured to receive energy from the energysource, the NFT including a peg having five surfaces, the peg includinga first material, the first material including gold (Au), silver (Ag),aluminum (Al), copper (Cu), ruthenium (Ru), rhodium (Rh), iridium (Ir),or combinations thereof; an overlying structure; and at least oneintermixing layer, positioned between the peg and the overlyingstructure, the at least one intermixing layer positioned on at least oneof the five surfaces of the peg, the intermixing layer including atleast the first material and a second material.

The above summary of the present disclosure is not intended to describeeach disclosed embodiment or every implementation of the presentdisclosure. The description that follows more particularly exemplifiesillustrative embodiments. In several places throughout the application,guidance is provided through lists of examples, which examples can beused in various combinations. In each instance, the recited list servesonly as a representative group and should not be interpreted as anexclusive list.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view of a magnetic disc drive that can includeHAMR devices.

FIG. 2 is a cross sectional view of a perpendicular HAMR magneticrecording head and of an associated recording medium.

FIGS. 3A and 3B are a perspective views of an illustrative NFT (FIG. 3A)and the peg thereof (FIG. 3B).

FIGS. 4A, 4B, and 4C are cross sections of devices including disclosedintermixing layers.

FIGS. 5A and 5B are views from the air bearing surface (ABS) of a pegcontaining disclosed adhesion layers.

FIGS. 6A and 6B are cross section views of NFTs including intermixinglayers and optional seed layers.

The figures are not necessarily to scale. Like numbers used in thefigures refer to like components. However, it will be understood thatthe use of a number to refer to a component in a given figure is notintended to limit the component in another figure labeled with the samenumber.

DETAILED DESCRIPTION

Heat assisted magnetic recording (referred to through as HAMR) utilizesradiation, for example from a laser, to heat media to a temperatureabove its curie temperature, enabling magnetic recording. In order todeliver the radiation, e.g., a laser beam, to a small area (on the orderof 20 to 50 nm for example) of the medium, a NFT is utilized. During amagnetic recording operation, the NFT absorbs energy from a laser andfocuses it to a very small area; this can cause the temperature of theNFT to increase. The temperature of the NFT can be elevated up to about400° C. or more.

In some embodiments, a NFT can include a small peg and a large disk. Thevery high temperatures that the NFT reaches during operation can lead todiffusion of the material of the NFT (for example gold) from the peg andtowards the disk. This can lead to deformation and recession of the peg,which can lead to failure of the NFT and the entire head.

Disclosed devices include one or more layers adjacent one or moresurfaces of the peg of the NFT to increase or improve adhesion of thepeg material to the surrounding materials or structures within thedevice while taking mismatches in coefficients of thermal expansion,crystalline structure, and lattice spacing into consideration.

FIG. 1 is a perspective view of disc drive 10 including an actuationsystem for positioning slider 12 over track 14 of magnetic medium 16.The particular configuration of disc drive 10 is shown for ease ofdescription and is not intended to limit the scope of the presentdisclosure in any way. Disc drive 10 includes voice coil motor 18arranged to rotate actuator arm 20 on a spindle around axis 22. Loadbeam 24 is connected to actuator arm 20 at head mounting block 26.Suspension 28 is connected to an end of load beam 24 and slider 12 isattached to suspension 28. Magnetic medium 16 rotates around an axis 30,so that the windage is encountered by slider 12 to keep it aloft a smalldistance above the surface of magnetic medium 16. Each track 14 ofmagnetic medium 16 is formatted with an array of data storage cells forstoring data. Slider 12 carries a magnetic device or transducer (notshown in FIG. 1) for reading and/or writing data on tracks 14 ofmagnetic medium 16. The magnetic transducer utilizes additionalelectromagnetic energy to heat the surface of medium 16 to facilitaterecording by a process termed heat assisted magnetic recording (HAMR).

A HAMR transducer includes a magnetic writer for generating a magneticfield to write to a magnetic medium (e.g. magnetic medium 16) and anoptical device to heat a portion of the magnetic medium proximate to thewrite field. FIG. 2 is a cross sectional view of a portion of a magneticdevice, for example a HAMR magnetic device 40 and a portion ofassociated magnetic storage medium 42. HAMR magnetic device 40 includeswrite pole 44 and return pole 46 coupled by pedestal 48. Coil 50comprising conductors 52 and 54 encircles the pedestal and is supportedby an insulator 56. As shown, magnetic storage medium 42 is aperpendicular magnetic medium comprising magnetically hard storage layer62 and soft magnetic underlayer 64 but can be other forms of media, suchas patterned media. A current in the coil induces a magnetic field inthe pedestal and the poles. Magnetic flux 58 exits the recording head atair bearing surface (ABS) 60 and is used to change the magnetization ofportions of magnetically hard layer 62 of storage medium 42 enclosedwithin region 58. Near field transducer 66 is positioned adjacent thewrite pole 44 proximate air bearing surface 60. Near field transducer 66is coupled to waveguide 68 that receives an electromagnetic wave from anenergy source such as a laser. An electric field at the end of nearfield transducer 66 is used to heat a portion 69 of magnetically hardlayer 62 to lower the coercivity so that the magnetic field from thewrite pole can affect the magnetization of the storage medium.

Devices disclosed herein can also include other structures. Devicesdisclosed herein can be incorporated into larger devices. For example,sliders can include devices as disclosed herein. Exemplary sliders caninclude a slider body that has a leading edge, a trailing edge, and anair bearing surface. The write pole, read pole, optical near fieldtransducer and contact pad (and optional heat sink) can then be locatedon (or in) the slider body. Such exemplary sliders can be attached to asuspension which can be incorporated into a disc drive for example. Itshould also be noted that disclosed devices can be utilized in systemsother than disc drives such as that depicted in FIG. 1.

FIGS. 3A and 3B show an example of the peg and disc of a peg and disctype NFT, and FIG. 3B shows a closer view of only the peg of the peg anddisc type NFT shown in FIG. 3A. The NFT in FIG. 3A includes a peg 305and a disc 310. The peg 305 shown in FIGS. 3A and 3B includes fivesurfaces that are not in contact with the disc 310, an air bearingsurface 306, a first surface 307, a second surface 309, a third surface308, and a fourth surface 311.

In some embodiments, the second surface 309 and the first surface 307are facing the pole and core respectively. In some embodiments, thethird surface 308 and the fourth surface 311 are not facing the pole orthe core. More specifically, the third surface 308 would be located infront of the paper on which FIG. 2 is depicted and the fourth surface311 would be located behind the paper on which FIG. 2 is depicted. Insome embodiments, the second surface 309 can also be referred to as theNFT-pole surface which faces a NFT-pole space, which can be referred toas a NPS (not shown herein). In some embodiments, the first surface 307can also be referred to as the NFT-core surface, which faces a NFT-corespace, which can be referred to as CNS (not shown herein). In someembodiments, the third surface 308 can also be described as the surfacewhich faces the left side of a device, in some embodiments; a left solidimmersion mirror can be located there. In some embodiments, the fourthsurface 311 can also be described as the surface which faces the rightside of a device, in some embodiments; a right solid immersion mirrorcan be located there.

Disclosed devices can include one or more intermixing layers located onone or more surfaces of a NFT. In some embodiments, disclosed devicescan include one or more intermixing layers located on one or moresurfaces of a peg of a NFT. In some embodiments, disclosed devices caninclude intermixing layers located on two or more surfaces of a peg of aNFT. In some embodiments, disclosed devices can include intermixinglayers located on three or more surfaces of a peg of a NFT. In someembodiments, disclosed devices can include intermixing layers located onfour or more surfaces of a peg of a NFT. In some embodiments, discloseddevices can include intermixing layers located on all five surfaces of apeg of a NFT. In some embodiments disclosed devices can includeintermixing layers located on each of the first surface 307, the secondsurface 309, the third surface 308, and the fourth surface 311.

Disclosed intermixing layers can function to provide variouscharacteristics. In some embodiments, intermixing layers can be used toimprove the adhesion of different layers having (in some embodiments)significantly different physical, mechanical, and thermal properties.Intermixing layers can include materials from the layers or structureson both adjacent surfaces thereof. This combination of materials fromadjacent layers or structures can reduce differences in physical,mechanical, and thermal properties. The addition of an intermixing layermay serve to reduce thermal stress caused by CTE differences, reduceinterface stresses caused by the crystalline structure and latticespacing difference, and reduce interface energy. Addition of anintermixing layer could also reduce defects at the interface. Typically,defects at the interface are an important path for diffusion of atoms ofthe NFT during peg recession. As a result, addition of an intermixinglayer could further improve the thermal stability of a peg.

Disclosed intermixing layers can consist of only a single layer or morethan one layer. Disclosed intermixing layers can also be used incombination with other layers. Generally, disclosed intermixing layersfunction to promote adhesion and the modulation of one or more physicaland/or mechanical properties of the structures or layers on either sideof the intermixing layer. Disclosed intermixing layers can be locatedbetween an underlying structure and an overlying structure. In someembodiments, an intermixing layer can be located between an underlyingstructure that is a NFT or a peg of a NFT and an overlying structurethat is a surrounding structure such as the CNS, the NPS, the headovercoat, or cladding for example. In some embodiments, an intermixinglayer can be located between an underlying structure that is a NFT or apeg of a NFT and an overlying structure that is a seed layer. In someembodiments, an intermixing layer can be located between an underlyingstructure that is a seed layer (for example a seed layer positioned on aNFT or a peg of a NFT) and an overlying structure such as the CNS, theNPS, the head overcoat, or cladding for example.

FIG. 4A depicts a cross section of a portion of a device including adisclosed intermixing layer. FIG. 4A shows an intermixing layer 402. Thedevice also includes an underlying structure 403 and an overlyingstructure 405. In some embodiments, the underlying structure can includea NFT or more specifically a peg of a NFT for example. In someembodiments, the underlying structure can include a seed layer, whichmay or may not be positioned on an underlying NFT, or more specificallya peg of a NFT, for example. In some embodiments, the overlyingstructure can include surrounding or overlying structures. Illustrativesurrounding or overlying structures can include, for example dielectricmaterials such as oxides, nitrides, or fluorides, typically those withlow refractive indices and low absorption. Specific illustrativematerials that surrounding or overlying structures can be made out ofcan include, for example SiO, AlO, MgO, B₂O₃, YO, SrO, CaO, NdO, HoO,ErO, TmO, BeO, ITO, TaO, CrO, NbO, BN, SiN, AlN, LiF, KF, NaF, RbF,MgF₂, CaF₂, SrF₂, BaF₂, FeF₂, MnF₂, NiF₂, ZnF₂, CdF₂, LaF₃, PbF₂, EuF₂,CeF₃, PrF₃, NdF₃, and TbF₃. In some embodiments, the overlying structurecan include, for example the CNS, the NPS, cladding, head overcoat (HOC)layer, or combinations thereof.

In some embodiments, an intermixing layer can include at least twomaterials. The at least two materials can include a first material and asecond material. The first material can be a material that is found inthe underlying structure 403 or a material that is compatible with theunderlying structure 403. The underlying structure 403 can be describedas being located directly below, in physical contact with, theintermixing layer (or directly below, in physical contact with a firstsurface of the intermixing layer). The second material can be a materialthat is found in the overlying structure 405 or a material that iscompatible with the overlying structure 405. A material being compatiblewith another material generally means that the two materials adhere toeach other relatively well, e.g., have a relatively high adhesionstrength, have relatively little mismatch in physical and mechanicalproperties, e.g., have similar coefficients of thermal expansion (CTE),similar lattice constants, similar crystal structures, or somecombination thereof. The overlying structure 405 can be described asbeing located directly above, in physical contact with, the intermixinglayer (or directly below, in physical contact with a second surface ofthe intermixing layer where the first surface is opposite the secondsurface). Disclosed intermixing layers can also be described asincluding a first material and a second material, the first and secondmaterial being in common with or compatible with layers or structuresadjacent the intermixing layer.

In some embodiments, an intermixing layer (which is located adjacent anunderlying structure that is a NFT, or a peg of a NFT) can include afirst material and a second material, where the first material is amaterial that is also in the underlying NFT. Illustrative NFT materialscan include plasmonic materials including, for example gold (Au), silver(Ag), aluminum (Al), copper (Cu), ruthenium (Ru), rhodium (Rh), iridium(Ir), or alloys thereof; thermally conductive oxides, and indium tinoxide (ITO). In some embodiments, illustrative NFT materials can alsoinclude those disclosed in U.S. Patent Publication No. 2013/0286799,U.S. Pat. No. 8,427,925, and U.S. patent application Ser. No. 13/923,925entitled MAGNETIC DEVICES INCLUDING FILM STRUCTURES, filed on Jun. 21,2013, and Ser. No. 14/062,651 entitled RECORDING HEADS INCLUDING NFT ANDHEATSINK, filed on Oct. 24, 2013, the disclosures of which areincorporated herein by reference thereto. In some embodiments, anintermixing layer can include gold as a first material.

In some embodiments, an intermixing layer (which is located adjacent anunderlying structure that is a seed layer) can include a first materialand a second material, where the first material is a material that isalso in the underlying seed layer. Illustrative seed layer materials caninclude, for example rhenium (Re), tungsten (W), osmium (Os), iridium(Ir), platinum (Pt), hafnium (Hf), tantalum (Ta), ruthenium (Ru),technetium (Tc), molybdenum (Mo), niobium (Nb), rhodium (Rh), palladium(Pd), beryllium (Be), chromium (Cr), silicon (Si), nickel (Ni), titanium(Ti), aluminum (Al), yttrium (Y), vanadium (V), magnesium (Mg),manganese (Mn), cobalt (Co), or combinations thereof. Alloys of two ormore metals can also be utilized.

In some embodiments, an intermixing layer can include a first materialand a second material, where the second material is a material that isalso in or is compatible with the overlying structure. In someembodiments, an intermixing layer can have a seed layer as the overlyingstructure. Illustrative materials that may be included in seed layersand therefore can be included as the second material can include, forexample rhenium (Re), tungsten (W), osmium (Os), iridium (Ir), platinum(Pt), hafnium (Hf), tantalum (Ta), ruthenium (Ru), technetium (Tc),molybdenum (Mo), niobium (Nb), rhodium (Rh), palladium (Pd), beryllium(Be), chromium (Cr), silicon (Si), nickel (Ni), titanium (Ti), aluminum(Al), yttrium (Y), vanadium (V), magnesium (Mg), manganese (Mn), cobalt(Co), zirconium (Zr), neodymium (Nd), or combinations thereof. Alloys oftwo or more metals can also be utilized.

In some embodiments, an intermixing layer can include a first materialand a second material, where the second material is a material that iscompatible with the overlying structure. In some embodiments, materialsthat are compatible with the overlying structures can include materialsthat are commonly used as adhesion layers. Illustrative adhesion layermaterials can include those disclosed in, for example U.S. PatentPublication Number 2014-0004384, PCT Application NumberPCT/US2013/038280, and commonly assigned and concurrently filed UnitedStates Patent Application having docket number 430.17840010 entitledDEVICES INCLUDING AT LEAST ONE ADHESION LAYER that claims priority toU.S. Provisional Application No. 61/838,394, having as inventors Cheng,Zhao, Kautzky, Rejda, Wierman, Franzen, and Boyne; the disclosures ofwhich are incorporated herein by reference thereto.

In some embodiments, an intermixing layer can include a first materialand a second material, where the second material is a material that iscompatible with the overlying structure. Illustrative types of overlyingstructures can include the CNS, the NPS, cladding, or head overcoat. Insome embodiments, materials that are compatible with the overlyingstructures can include, for example metals, oxides, nitrides, carbides,or sulfides. Illustrative materials that can be considered compatiblewith the CNS, NPS or cladding can include metals that are relativelyeasily oxidized, oxides, and nitrides for example. Specific illustrativemetals can include, titanium (Ti), zirconium (Zr), iridium (Ir),chromium (Cr), tantalum (Ta), aluminum (Al), silicon (Si), indium (In),magnesium (Mg), beryllium (Be), hafnium (Hf), manganese (Mn), niobium(Nb), boron (B), nickel (Ni), vanadium (V), yttrium (Y), cobalt (Co),osmium (Os), and combinations thereof for example. Specific illustrativeoxides can include aluminum oxide (AlO), silicon oxide (SiO), chromiumoxide (CrO), niobium oxide (NbO), titanium oxide (TiO), hafnium oxide(HfO), zirconium oxide (ZrO), tantalum oxide (TaO), indium oxide (InO),tin oxide (SnO), indium tin oxide (ITO), magnesium oxide (MgO), yttriumoxide (YO), manganese oxide (MnO), strontium oxide (SrO), andcombinations thereof for example. Oxides including two or morenon-oxygen atoms can also be utilized herein. Specific illustrativenitrides can include titanium nitride (TiN), zirconium nitride (ZrN),chromium nitride (CrN), hafnium nitride (HfN), niobium nitride (NbN),silicon nitride (SiN), aluminum nitride (AlN), boron nitride (BN),tantalum nitride (TaN), and combinations thereof for example. Nitridesincluding two or more non-nitrogen atoms can also be utilized herein.

In some embodiments, the second material in an intermixing layer caninclude a metal, specific illustrative metals can include for examplerhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), tantalum (Ta),ruthenium (Ru), technetium (Tc), rhodium (Rh), palladium (Pd), beryllium(Be), aluminum (Al), manganese (Mn), indium (In), boron (B), orcombinations thereof. In some embodiments, the metal can includespecific illustrative metals such as for example Pt, Ir, Al, Rh, Ru, Pd,or combinations thereof. In some embodiments, the metal can includespecific illustrative metals such as for example Pt, Ir, Al, orcombinations thereof. In some embodiments, the metal can includespecific illustrative metals such as for example Pt. In someembodiments, the metal can include specific illustrative metals such asfor example Ir. In some such embodiments, the metal can include specificillustrative metals such as for example Ir, Pt, Pd, Ru, Rh, Re, Ta, Nb,Os, Al, B, or combinations thereof. Alloys of two or more metals canalso be utilized.

In some embodiments, the second material in an intermixing layer caninclude a metal, specific illustrative metals can include for exampletungsten (W), molybdenum (Mo), chromium (Cr), silicon (Si), nickel (Ni),titanium (Ti), yttrium (Y), vanadium (V), magnesium (Mg), cobalt (Co),tin (Sn), niobium (Nb), hafnium (Hf), or combinations thereof. In someembodiments, the metal can include specific illustrative metals such asfor example Cr, Ni, Sn, or combinations thereof. In some embodiments,the metal can include specific illustrative metals such as for exampleCr, Sn, or combinations thereof. In some such embodiments, the metal caninclude specific illustrative metals such as for example W, Ti, Cr, Si,Ni, or combinations thereof. Alloys of two or more metals can also beutilized.

In some embodiments, the second material in an intermixing layer caninclude a metal, specific illustrative metals can include for exampleRe, Os, Ir, Pt, Hf, Ta, Ru, Tc, Nb, Rh, Pd, Be, Al, Mn, In, W, Mo, Cr,Si, Ni, Ti, Zr, Y, V, Mg, Co, Sn, or combinations thereof. In some suchembodiments, the metal can include specific illustrative metals such asfor example Ir, Pt, Pd, Nb, Ru, Re, Ta, Os, Al, B, W, Ti, Cr, Si, Ni, orcombinations thereof. In some embodiments, the metal can includespecific illustrative metals such as for example Pt, Ir, Al, Cr, Ni, Sn,or combinations thereof. In some embodiments, the metal can includespecific illustrative metals such as for example Pt, Ir, Cr, Sn, or somecombinations thereof. In some embodiments, the metal can include a metalthat has a relatively high resistance to oxidation so that the adhesionlayer is not oxidized during use of the NFT. In some such embodiments,the metal can include specific illustrative metals such as for exampleIr, Pt, Pd, Nb, Ru, Re, Ta, Nb, Os, Al, B, W, Ti, Cr, Si, Ni, orcombinations thereof. Alloys of two or more metals can also be utilized.

In some embodiments, the second material in an intermixing layer caninclude a metal, specific illustrative metals can include for examplezirconium (Zr), titanium (Ti), yttrium (Y), scandium (Sc), aluminum(Al), ruthenium (Ru), vanadium (V), silicon (Si), germanium (Ge),tantalum (Ta), and tin (Sn). In some embodiments, the second material inan intermixing layer can include a metal; specific illustrative metalscan include for example cobalt (Co), nickel (Ni), chromium (Cr),tungsten (W), titanium tungsten (TiW), molybdenum (Mo), magnesium (Mg),niobium (Nb), hafnium (Hf), zinc (Zn), or some combination thereof.Alloys of two or more metals can also be utilized.

Specific illustrative intermixing layers can contain gold as a firstmaterial and a metal as a second material. Such intermixing layers couldtherefore be characterized as a gold alloy with a gold phase, or a goldalloy with an intermetallic phase. Such intermixing layers may increasethe oxidation resistance of other elements (impurities) in the gold dueto a gas barrier layer of fact of the gold. Such intermixing layers mayreduce mismatches in physical, mechanical, thermal, or some combinationthereof between over and underlying layers, and also reduce theinterface energy.

In some embodiments, the second material in an intermixing layer caninclude a nitride; specific illustrative nitrides can include forexample chromium nitride (CrN), boron nitride (BN), niobium nitride(NbN), silicon nitride (SiN), aluminum nitride (AlN), or somecombination thereof. In some embodiments, the second material in anintermixing layer can include a nitride; specific illustrative nitridescan include for example titanium nitride (TiN), zirconium nitride (ZrN),tantalum nitride (TaN), hafnium nitride (HfN) or some combinationthereof. Nitrides including two or more non-nitrogen atoms can also beutilized herein.

In some embodiments, the second material in an intermixing layer caninclude an oxide, specific illustrative oxides can include for examplealuminum oxide (AlO), yttrium oxide (YO), indium oxide (In₂O₃), tinoxide (SnO₂), zinc oxide (ZnO) (e.g., doped ZnO, for example aluminum(Al) doped ZnO, or gallium (Ga) doped ZnO), beryllium oxide (BeO),silicon oxide (SiO), iron oxide (FeO), titanium oxide (TiO), zirconiumoxide (ZrO), tantalum oxide (TaO), manganese oxide (MnO), cadmium oxide(CdO), magnesium oxide (MgO), hafnium oxide (HfO), chromium oxide (CrO),strontium oxide (SrO), niobium oxide (NbO), or some combination thereof.In some embodiments, the oxide can include specific illustrative oxidessuch as for example, tin oxide (SnO), indium oxide (InO), or somecombination thereof. In some embodiments, the oxide can include specificillustrative oxides such as for example, beryllium oxide (BeO), siliconoxide (SiO), iron oxide (FeO), aluminum oxide (AlO), titanium oxide(TiO), zirconium oxide (ZrO), tantalum oxide (TaO), manganese oxide(MnO), cadmium oxide (CdO), tin oxide (SnO), indium oxide (InO), indiumtin oxide (ITO), or some combination thereof. It should be noted thatoxides can include any stoichiometry including the particular notedelement and oxygen. For example silicon oxide includes both silicondioxide (SiO₂) and silicon monoxide (SiO). Oxides including two or morenon-oxygen atoms can also be utilized herein, examples can includeIn₂O₃—SnO₂ (ITO) (e.g., a solid solution), TaSiO, AlSiO, and YAlO.

In some embodiments, the second material in an intermixing layer caninclude a carbide specific illustrative carbides can include for exampletantalum carbide (TaC), uranium carbide (UC), hafnium carbide (HfC),zirconium carbide (ZrC), scandium carbide (ScC), manganese carbide(MnC), iron carbide (FeC), niobium carbide (NbC), technetium carbide(TcC), rhenium carbide (ReC), or some combination thereof. In someembodiments, the carbide can include specific illustrative carbides suchas for example, vanadium carbide (VC), tungsten carbide (WC), titaniumcarbide (TiC), chromium carbide (CrC), cobalt carbide (CoC), nickelcarbide (NiC), yttrium carbide (YC), molybdenum carbide (MoC), or somecombination thereof. In some embodiments, the carbide can includespecific illustrative carbides such as for example, vanadium carbide(VC), tantalum carbide (TaC), titanium carbide (TiC), uranium carbide(UC), tungsten carbide (WC), hafnium carbide (HfC), zirconium carbide(ZrC), chromium carbide (CrC), scandium carbide (ScC), manganese carbide(MnC), iron carbide (FeC), cobalt carbide (CoC), nickel carbide (NiC),yttrium carbide (YC), niobium carbide (NbC), molybdenum carbide (MoC),technetium carbide (TcC), rhenium carbide (ReC), or some combinationthereof. In some embodiments, the second material in an intermixinglayer can include a carbide specific illustrative carbides can includefor example silicon carbide (SiC), hydrogenated silicon carbide (SiC:H),or combinations thereof, for example. Carbides including two or morenon-carbon atoms can also be utilized herein.

In some embodiments, the second material in an intermixing layer caninclude a sulfide, specific illustrative sulfides can include forexample zirconium sulfides, zinc sulfides, titanium sulfides, cobaltsulfides, silver sulfides, copper sulfides, indium sulfides, cadmiumsulfides, tin sulfides, bismuth sulfides, lead sulfides, seleniumsulfides, iron sulfides, molybdenum sulfides, and combinations thereof.It should be noted that sulfides can include any stoichiometry includingthe particular noted element and sulfur. Sulfides including two or morenon-sulfur atoms can also be utilized herein.

Specific illustrative intermixing layers can contain gold as a firstmaterial and a nitride, oxide, carbide, or sulfide as a second material.Such intermixing layers could therefore be characterized as includinggold atoms in the intermixing layer that could form gold atom clustersor gold nanoparticles. Such gold nanoparticles could significantlyimprove the adhesion between the gold and the oxide, nitride, carbide,or sulfide adhesion layer due to an increased surface contact area aswell as mechanical interlock.

In some embodiments, a disclosed intermixing layer can have a thicknessthat is at least 0.1 nm (1 Å), in some embodiments at least 0.2 nm (2Å), or in some embodiments at least 1 nm (10 Å). In some embodiments, adisclosed intermixing layer can have a thickness that is not greaterthan 100 nm (1000 Å), in some embodiments not greater than 40 nm (400Å), in some embodiments, not greater than 5 nm (50 Å), or in someembodiments not greater than 3.5 nm (35 Å). The thickness (e.g., theaverage thickness) of an intermixing layer can be measured using, forexample, transmission electron microscopy (TEM), X-ray reflectivity(XRR), or x-ray photoelectron spectroscopy (XPS). The thickness can bedetermined using calibration from standard samples having knownthicknesses, for example.

Disclosed intermixing layers that include a first material and a secondmaterial can be a single layer that has a single substantiallyhomogeneous composition across the intermixing layer. In someembodiments, disclosed intermixing layers can have a composition that isnot substantially homogeneous across the entirety of the intermixinglayer. For example, in some embodiments, a disclosed intermixing layercan have a composition that changes from one surface to the other, orcan have a compositional gradient. For example, a disclosed intermixinglayer can have an amount of a first material (or a second material) thatchanges from one surface to the other. More specifically, a disclosedintermixing layer can have an amount of a first material that changesfrom a first surface to a second surface (the second surface oppositethe first surface). An illustrative example includes an intermixinglayer having an amount of a first material that changes from a firstsurface, the first surface in physical contact with a NFT (for example)to a second surface, the second surface in physical contact with anadhesion layer (for example). Another specific illustrative exampleincludes an intermixing layer having an amount of gold that changes froma first surface in physical contact with a NFT to a second surface inphysical contact with an adhesion layer. Another specific illustrativeexample includes an intermixing layer having a composition that changesfrom almost 100% gold at a first surface in physical contact with a NFTto almost 100% second material at a second surface in physical contactwith an adhesion layer.

Disclosed intermixing layers, for example intermixing layers containinga first material and a second material can be formed using variousprocesses. In some embodiments, disclosed intermixing layers containinga first material and a second material can be formed by co-deposition ofthe first material and the second material. For example disclosedintermixing layers could be formed by co-deposition of an NFT materialor a seed layer material and an adhesion layer material. For exampledisclosed intermixing layers could be formed by co-deposition of goldand a metal, oxide, nitride, carbide, or sulfide. In some embodiments,the intermixing layer can include multiple intermixing layers that mayor may not have different compositions, and may or may not compositionalgradients that may or may not be the same. In some embodiments, anintermixing layer can have a composition such that the concentration ofthe second material increases across the layer from the interface withthe underlying structure (that can include the first material) to theinterface with the overlying structure (that can include the secondmaterial).

In some embodiments, an intermixing layer can also be formed bydepositing alternating layers of the first and the second materials. Thelayer thickness of the first and the second material can be varied toproduce an intermixing layer having a desired concentration. In someembodiments, an intermixing layer composed of alternating layers of afirst material and a second material can have a composition such thatthe concentration of the second material increases across the layer fromthe interface with the underlying structure (that can include the firstmaterial) to the interface with the overlying structure (that caninclude the second material), in such embodiments this could beaccomplished by changing the thicknesses of the two layers.

Disclosed intermixing layers containing a first material and a secondmaterial could also be formed by electrochemical methods, physical vapordeposition methods, chemical vapor deposition methods, or variouscombinations thereof. Disclosed intermixing layers containing a firstmaterial and a second material could also be formed using ionimplantation, high temperature deposition, high bias deposition, thermalannealing, laser radiation, electron beam radiation, or variouscombinations thereof.

Disclosed intermixing layers can also be formed by depositing anintermixing layer including a first material and a second material, thefirst and second material being in common with layers or structuresadjacent the intermixing layer, and then oxidizing the surface of theintermixing layer not physically in contact with the NFT. Such anintermixing layer is depicted in FIG. 4B. A step of oxidizing the topsurface of the intermixing layer 412 can function to form an oxidationlayer 414 thereon which may improve the optical properties of theintermixing layer, improve thermal stability of the intermixing layer,improve adhesion with adjacent structures, or any combination thereof.In some illustrative embodiments such intermixing layers can bedeposited using ion implantation, high temperature deposition, high biasdeposition, or deposition followed by thermal annealing to improve theadhesion of the intermixing layer to the NFT peg. Then the top surfaceof the intermixing layer 412 could be oxidized using plasma oxidation,air oxidation, ozone oxidation, or thermal oxidation, for example toform an oxidation layer 414 that could improve the adhesion of theintermixing layer to overlying structure 405.

In some particular embodiments, intermixing layers that are adjacent anNFT can include an alloy that contains the NFT material and at least asecondary element. Such intermixing layers can be, but need not bereferred to as alloy intermixing layers. Such alloy intermixing layerscan take advantage of the excellent optical properties of the NFTmaterial (for example gold) and the relatively high thermal stability ofan alloy including the NFT material. As such, these types of alloyintermixing layers may be able to be more advantageous than having theentire NFT or peg made entirely of the alloy. It should also be notedthat such alloy intermixing layers can be utilized in instances wherethe peg is made of an alloy. In such instances, the alloy intermixinglayer could have a higher content of the secondary element than thealloy of the peg, because there won't be such a high optical penaltybecause of the relatively small thickness of the alloy intermixinglayer. Also, in instances where the secondary element is the same in thepeg and the alloy intermixing layer, the system could benefit from bothstructures having the same crystalline structure. This would mean thatthe interface could have very low interface energy, thereby reducing theinterface diffusion.

Such alloy intermixing layers can be included on all surfaces of theNFT, or less than all surfaces of the NFT. In some embodiments, suchalloy intermixing layers can be included on all surfaces of a peg anddisc type NFT. In some embodiments, such alloy intermixing layers can beincluded on all surfaces of a peg except for the ABS. Referring back toFIGS. 3A and 3B, such alloy intermixing layers could be included, forexample, on a first surface 307, a second surface 309, a third surface308, and a fourth surface 311 of the peg illustrated in FIGS. 3A and 3B.FIG. 5A illustrates a peg 505 as viewed from the ABS, that has an alloyintermixing layer 502 on all four surfaces thereof. As seen there, thealloy intermixing layer 502 is depicted as a single contiguous layerthat is located on all four surfaces of the peg. It should also be notedthat the alloy intermixing layers on the four surfaces could be disposedseparately, discontinuous with the adjacent intermixing layers, or somecombination thereof.

The alloy making up such illustrative alloy intermixing layers can bereferred to as a NFT material/X alloy. In some embodiments, the NFT canbe made of gold or a gold alloy. In such embodiments, the alloy of thealloy intermixing layer can be given as AuX. X can include, for examplecobalt (Co), nickel (Ni), chromium (Cr), platinum (Pt), boron (B), iron(Fe), aluminum (Al), tantalum (Ta), tungsten (W), silicon (Si), titanium(Ti), iridium (Ir), zirconium (Zr), or some combination thereof. In someembodiments, the alloy intermixing layer can include a ternary alloy. Insome embodiments, the NFT can be made of gold and the alloy intermixinglayer can be a gold cobalt alloy, for example.

An alloy of an alloy intermixing layer can have various amounts of thesecondary element. In some embodiments, an alloy of an alloy intermixinglayer can have not less than 0.1 at % (atomic percent) secondary element(X), or in some embodiments, not less 5 at %. In some embodiments, analloy of an alloy intermixing layer can have not greater than 90 at %secondary element (X), or in some embodiments, not greater than 50 at %.

In some embodiments, disclosed alloy intermixing layers can have athickness that is at least 0.1 nm (1 Å), or in some embodiments at least1 nm (10 Å). In some embodiments, disclosed alloy intermixing layer canhave a thickness that is not greater than 40 nm (400 Å), or in someembodiments, not greater than 15 nm (150 Å). The thickness (e.g., theaverage thickness) of an alloy intermixing layer can be measured using,for example, transmission electron microscopy (TEM), X-ray reflectivity(XRR), or x-ray photoelectron spectroscopy (XPS). The thickness can bedetermined using calibration from standard samples having knownthicknesses, for example.

In some particular embodiments intermixing layers that are adjacent aseed layer can include an alloy that contains the seed layer materialand at least a secondary element. Such embodiments can be similar to theembodiment depicted in FIG. 4A, where the underlying structure 403 isthe peg and the overlying structure 405 is a seed layer. FIG. 5Billustrates a peg 505 with an alloy intermixing layer 502 thereon, and aseed layer 506 thereon. The seed layer 506 can be utilized to aid in thedeposition of, or modulate the properties of a layer formed thereon, forexample an overcoat layer. The material of the seed layer can depend atleast in part on the material that is being deposited after the seedlayer (for example the material of the overcoat layer or the CNS, NPS,cladding, or combinations thereof). In some embodiments, the seed layercan include a metal. In some embodiments, illustrative metals caninclude, for example chromium (Cr), nickel (Ni), cobalt (Co), tungsten(W), titanium (Ti), platinum (Pt), iridium (Ir), tantalum (Ta),zirconium (Zr), molybdenum (Mo), rhodium (Rh), ruthenium (Ru), niobium(Nb), yttrium (Y), palladium (Pd), or some combination thereof. In someembodiments, illustrative metals can include, for example Cr. The seedlayer can have various thicknesses. In some embodiments, the seed layercan have a thickness that is at least 0.05 nm (0.5 Å), or in someembodiments at least 0.5 nm (5 Å). In some embodiments, the seed layercan have a thickness that is not greater than 40 nm (400 Å), or in someembodiments not greater than 5 nm (50 Å).

Utilization of a disclosed alloy intermixing layer and an optional seedlayer could function to reduce the interface energy of the peg (e.g.,made of gold) with the surrounding materials to increase the thermalstability of the peg.

In some embodiments, an alloy intermixing layer could be disposed onmore than just the peg of the NFT. For example, an intermixing layer(alloy intermixing layer or otherwise) can be disposed on one or morethan one surface of the entire rod, for example. The rod can generallybe described as the back portion of the peg (in a direction directedaway from the ABS of the peg). Alternatively, the rod can be describedby the process by which it is formed in that the peg is part of the rod,and the peg is described as the front portion (towards the ABS) only ofthe rod. In some embodiments, the rod can be the peg.

FIG. 6A shows a side view of a NFT showing the peg 602, the disk 604,and the rod 606. The embodiment in FIG. 6A includes an intermixing layer612 and a seed layer 614 located on at least two surfaces (the surfacesanalogous to the first surface 307 and the second surface 309 in FIGS.3A and 3B) of the peg. The intermixing layer 612 and seed layer 614located on the bottom surface (analogous to the first surface 307 inFIGS. 3A and 3B) can be configured to be in contact with the entire peg602, the entire rod 606 and even in contact with the disc 604.

In some embodiments, an alloy intermixing layer could be disposed on thefour surfaces of the peg (a first surface 307, a second surface 309, athird surface 308, and a fourth surface 311 of the peg illustrated inFIGS. 3A and 3B) and a seed layer (as discussed in connection with thealloy intermixing layer) exists only on the first surface 307. Such aconfiguration could offer all the advantageous properties provided byalloy intermixing layers but reduce the impact of the poor opticalproperties of the seed layer material and the decrease in opticalproperties of the peg that can be caused by diffusion of the seed layermaterial into the peg.

In some embodiments, the ABS 306 of the peg 305 could include an alloyintermixing layer thereon. In some such embodiments, the alloyintermixing layer could be formed, for example, by diffusion of a layerof X (secondary element) or AuX from the ABS surface or ionimplantation, or high bias deposition of X from the ABS.

FIG. 6B shows a side view of a NFT showing the peg 602, the disk 604,and the rod 606. The embodiment in FIG. 6B includes an intermixing layer612 and a seed layer 614 located on at least two surfaces (the surfacesanalogous to the first surface 307 and the second surface 309 in FIGS.3A and 3B) of the peg. The intermixing layer 612 is also located on therod 606. As seen in FIG. 6B, the intermixing layer 612 is located on thesurfaces of the rod 606 where it contacts the disc 604. The seed layer614 is located on the bottom surface (analogous to the first surface 307in FIGS. 3A and 3B) of the peg 602 and rod 606, but is not on a backsurface 607 of the rod.

In such embodiments, an intermixing layer (e.g., an alloy intermixinglayer) could also function as a barrier layer between the rod 606 andthe disk 604. This could serve to reduce the effective area of the rod,the peg to rod volume ratio, and the total defects inside the rod. Allof these factors could serve to increase the thermal stability of thepeg. The use of the NFT material/X alloy would serve to isolate the rodfrom the peg without increasing the temperature of the peg because thematerial of the NFT material/X alloy would have optical properties verysimilar to that of the NFT material itself.

Intermixing layers located on the bottom surface (the first surface 307in FIGS. 3A and 3B) of the NFT can also be described as being locatedbetween the NFT and the substrate on which the NFT is formed. In suchembodiments, an intermixing layer (e.g., an alloy intermixing layer) canfunction to affect the adhesion of the NFT to the substrate (or the NFTto an adhesion layer formed on the substrate) while modulating CTEmismatches, lattice mismatches, thermal stresses, and interface energiesbetween the two.

In such embodiments, an intermixing layers on the first surface 307 ofthe peg (e.g., the bottom surface or the surface between the NFT and thesubstrate upon which it is formed) can include, for example chromium(Cr), silicon (Si), aluminum (Al), nickel (Ni), titanium (Ti), iridium(Ir), niobium (Nb), tantalum (Ta), zirconium (Zr), hafnium (Hf), yttrium(Y), or some combination thereof. Intermixing layers on the firstsurface 307 of the peg can have various thicknesses. In someembodiments, intermixing layers on the first surface 307 of the peg canhave a thickness that is not less than 0.1 nm (1 Å), or in someembodiments at least 0.5 nm (5 Å). In some embodiments, intermixinglayers on the first surface 307 of the peg can have a thickness that isnot greater than 40 nm (400 Å), or in some embodiments, not greater 5 nm(50 Å). The thickness (e.g., the average thickness) of such anintermixing layer can be measured using, for example, transmissionelectron microscopy (TEM), X-ray reflectivity (XRR), or x-rayphotoelectron spectroscopy (XPS). The thickness can be determined usingcalibration from standard samples having known thicknesses, for example.

In such embodiments, intermixing layers on the first surface 307 of thepeg can include, for example a NFT material (e.g., gold) and a secondaryelement (X). In some embodiments, X can be selected from aluminum (Al),silicon (Si), nickel (Ni), cobalt (Co), boron (B), bismuth (Bi), indium(In), sulfur (S), tin (Sn), hafnium (Hf), niobium (Nb), carbon (C),manganese (Mn), antimony (Sb), tellurium (Te), sodium (Na), vanadium(V), yttrium (Y), nitrogen (N), oxygen (O), erbium (Er), holmium (Ho),lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn),lanthanum (La), neodymium (Nd), strontium (Sr), platinum (Pt), barium(Ba), chlorine (Cl), cerium (Cs), dysprosium (Dy), europium (Eu),fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I),osmium (Os), rhenium (Re), phosphorus (P), rubidium (Rb), selenium (Se),samarium (Sm), terbium (Tb), thulium (Th), beryllium (Be), calcium (Ca),cesium (Ce), Gallium (Ga), potassium (K), lithium (Li), and combinationsthereof for example. In some embodiments, X can be selected from boron(B), bismuth (Bi), indium (In), sulfur (S), tin (Sn), hafnium (Hf),niobium (Nb), carbon (C), manganese (Mn), antimony (Sb), tellurium (Te),erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium(Sc), uranium (U), zinc (Zn), barium (Ba), chlorine (Cl), cesium (Cs),dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium(Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium(Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thulium(Th), and combinations thereof for example. In some embodiments, X canbe selected from sodium (Na), nickel (Ni), vanadium (V), yttrium (Y),nitrogen (N), oxygen (O), lanthanum (La), neodymium (Nd), strontium(Sr), platinum (Pt), beryllium (Be), calcium (Ca), cerium (Ce), Gallium(Ga), potassium (K), lithium (Li), and combinations thereof for example.In some embodiments, the alloy intermixing layer can include a ternaryalloy. In some embodiments, X can include, for example NiAl or CoNi(e.g., forming a ternary alloy with the NFT material).

An alloy of an intermixing layer can have various amounts of thesecondary element. In some embodiments, an alloy of an intermixing layercan have not less than 0.1 at % (atomic percent) secondary element (X),or in some embodiments, not less than 0.5 at %. In some embodiments, analloy of an intermixing layer can have not greater than 90 at %secondary element (X), or in some embodiments, not greater than 5 at %.

Illustrative processes for forming layers of materials disclosed hereincan include for example, deposition methods such as chemical vapordeposition (CVD), physical vapor deposition (PVD), atomic layerdeposition (ALD), plating (e.g., electroplating), sputtering methods,cathodic arc deposition methods, ion implantation method and evaporativemethods.

Processes to form the disclosed layers could be easily integrated intothe overall manufacturing process of the device. Overall, the use ofdisclosed intermixing layers would decrease or eliminate yield loss dueto delamination of the NFT and contribute to increased NFT lifetimeduring the operation of the magnetic device with very little effect oncurrent formation processes for the device.

Intermixing layers, similar to those described herein could also beutilized to improve adhesion between two different oxide layers. Forexample, an intermixing layer could be utilized between any two of theCNS, the NPS, the cladding, and the head overcoat layer. Such structuresor layers can be made of various oxides, for example, and disclosedintermixing layers could be utilized to improve adhesion and addressmismatches in physical and mechanical properties thereof.

All scientific and technical terms used herein have meanings commonlyused in the art unless otherwise specified. The definitions providedherein are to facilitate understanding of certain terms used frequentlyherein and are not meant to limit the scope of the present disclosure.

As used in this specification and the appended claims, “top” and“bottom” (or other terms like “upper” and “lower”) are utilized strictlyfor relative descriptions and do not imply any overall orientation ofthe article in which the described element is located.

As used in this specification and the appended claims, the singularforms “a”, “an”, and “the” encompass embodiments having pluralreferents, unless the content clearly dictates otherwise.

As used in this specification and the appended claims, the term “or” isgenerally employed in its sense including “and/or” unless the contentclearly dictates otherwise. The term “and/or” means one or all of thelisted elements or a combination of any two or more of the listedelements.

As used herein, “have”, “having”, “include”, “including”, “comprise”,“comprising” or the like are used in their open ended sense, andgenerally mean “including, but not limited to”. It will be understoodthat “consisting essentially of”, “consisting of”, and the like aresubsumed in “comprising” and the like. For example, a conductive tracethat “comprises” silver may be a conductive trace that “consists of”silver or that “consists essentially of” silver.

As used herein, “consisting essentially of,” as it relates to acomposition, apparatus, system, method or the like, means that thecomponents of the composition, apparatus, system, method or the like arelimited to the enumerated components and any other components that donot materially affect the basic and novel characteristic(s) of thecomposition, apparatus, system, method or the like.

The words “preferred” and “preferably” refer to embodiments that mayafford certain benefits, under certain circumstances. However, otherembodiments may also be preferred, under the same or othercircumstances. Furthermore, the recitation of one or more preferredembodiments does not imply that other embodiments are not useful, and isnot intended to exclude other embodiments from the scope of thedisclosure, including the claims.

Also herein, the recitations of numerical ranges by endpoints includeall numbers subsumed within that range (e.g., 1 to 5 includes 1, 1.5, 2,2.75, 3, 3.80, 4, 5, etc. or 10 or less includes 10, 9.4, 7.6, 5, 4.3,2.9, 1.62, 0.3, etc.). Where a range of values is “up to” a particularvalue, that value is included within the range.

Use of “first,” “second,” etc. in the description above and the claimsthat follow is not intended to necessarily indicate that the enumeratednumber of objects are present. For example, a “second” substrate ismerely intended to differentiate from another infusion device (such as a“first” substrate). Use of “first,” “second,” etc. in the descriptionabove and the claims that follow is also not necessarily intended toindicate that one comes earlier in time than the other.

Thus, embodiments of devices including at least one intermixing layerare disclosed. The implementations described above and otherimplementations are within the scope of the following claims. Oneskilled in the art will appreciate that the present disclosure can bepracticed with embodiments other than those disclosed. The disclosedembodiments are presented for purposes of illustration and notlimitation.

What is claimed is:
 1. A device comprising: a near field transducer(NFT), the NFT comprising a peg having five surfaces, the peg comprisinga first material, the first material comprising gold (Au), silver (Ag),aluminum (Al), copper (Cu), ruthenium (Ru), rhodium (Rh), iridium (Ir),or combinations thereof; an overlying structure; at least oneintermixing layer, positioned between the peg and the overlyingstructure, the at least one intermixing layer positioned on at least oneof the five surfaces of the peg, the intermixing layer comprising atleast the first material and a second material.
 2. The device accordingto claim 1, wherein the peg comprises gold or an alloy thereof.
 3. Thedevice according to claim 2, wherein the second material is selectedfrom a metal, an oxide, a nitride, a carbide, or a sulfide.
 4. Thedevice according to claim 1, wherein the second material is selectedfrom: rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), tantalum(Ta), ruthenium (Ru), technetium (Tc), rhodium (Rh), palladium (Pd),beryllium (Be), aluminum (Al), manganese (Mn), indium (In), boron (B),tungsten (W), molybdenum (Mo), chromium (Cr), silicon (Si), nickel (Ni),titanium (Ti), yttrium (Y), vanadium (V), magnesium (Mg), cobalt (Co),tin (Sn), niobium (Nb), hafnium (Hf), zirconium (Zr), titanium (Ti),scandium (Sc), ruthenium (Ru), germanium (Ge), neodymium (Nd), iron(Fe), and combinations thereof; chromium nitride (CrN), boron nitride(BN), titanium nitride (TiN), zirconium nitride (ZrN), tantalum nitride(TaN), hafnium nitride (HfN), silicon nitride (SiN), aluminum nitride(AlN), hafnium nitride (HfN), niobium nitride (NbN), and combinationsthereof; indium oxide (In₂O₃), tin oxide (SnO₂), zinc oxide (ZnO),beryllium oxide (BeO), silicon oxide (SiO), iron oxide (FeO), titaniumoxide (TiO), zirconium oxide (ZrO), tantalum oxide (TaO), manganeseoxide (MnO), cadmium oxide (CdO), magnesium oxide (MgO), hafnium oxide(HfO), aluminum oxide (AlO), yttrium oxide (YO), chromium oxide (CrO),strontium oxide (SrO), niobium oxide (NbO), and combinations thereof;tantalum carbide (TaC), uranium carbide (UC), hafnium carbide (HfC),zirconium carbide (ZrC), scandium carbide (ScC), manganese carbide(MnC), iron carbide (FeC), niobium carbide (NbC), technetium carbide(TcC), rhenium carbide (ReC), vanadium carbide (VC), tungsten carbide(WC), titanium carbide (TiC), chromium carbide (CrC), cobalt carbide(CoC), nickel carbide (NiC), yttrium carbide (YC), molybdenum carbide(MoC), silicon carbide (SiC), hydrogenated silicon carbide (SiC:H), andcombinations thereof; and zirconium sulfides, zinc sulfides, titaniumsulfides, cobalt sulfides, silver sulfides, copper sulfides, indiumsulfides, cadmium sulfides, tin sulfides, bismuth sulfides, leadsulfides, selenium sulfides, iron sulfides, molybdenum sulfides, andcombinations thereof.
 5. The device according to claim 1, wherein the atleast one intermixing layer has a thickness from about 0.1 nm to about100 nm.
 6. The device according to claim 1, wherein the at least oneintermixing layer has a composition gradient across the intermixinglayer from a first surface of the intermixing layer to a second opposingsurface of the intermixing layer.
 7. The device according to claim 1,wherein the at least one intermixing layer comprises alternating layersof the first material and the second material.
 8. The device accordingto claim 7, wherein the alternating layers of the first material and thesecond material have changing thicknesses to create an overallcompositional gradient.
 9. The device according to claim 1, wherein aportion of the intermixing layer has been oxidized.
 10. The deviceaccording to claim 1, wherein the at least one intermixing layer ispositioned on at least four surfaces of the peg.
 11. A devicecomprising: a near field transducer (NFT), the NFT comprising a peghaving five surfaces; at least one seed layer, the at least one seedlayer positioned on at least one of the five surfaces of the peg, theseed layer comprising a first material, the first material comprising ametal; an overlying structure; at least one intermixing layer,positioned between the seed layer and the overlying structure, the atleast one intermixing layer positioned on at least one of the fivesurfaces of the peg, the intermixing layer comprising at least the firstmaterial and a second material.
 12. The device according to claim 11,wherein the first material is selected from: rhenium (Re), tungsten (W),osmium (Os), iridium (Ir), platinum (Pt), hafnium (Hf), tantalum (Ta),ruthenium (Ru), technetium (Tc), molybdenum (Mo), niobium (Nb), rhodium(Rh), palladium (Pd), beryllium (Be), chromium (Cr), silicon (Si),nickel (Ni), titanium (Ti), aluminum (Al), yttrium (Y), vanadium (V),magnesium (Mg), manganese (Mn), cobalt (Co), or combinations thereof.13. The device according to claim 11, wherein the second material isselected from: rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt),tantalum (Ta), ruthenium (Ru), technetium (Tc), rhodium (Rh), palladium(Pd), beryllium (Be), aluminum (Al), manganese (Mn), indium (In), boron(B), tungsten (W), molybdenum (Mo), chromium (Cr), silicon (Si), nickel(Ni), titanium (Ti), yttrium (Y), vanadium (V), magnesium (Mg), cobalt(Co), tin (Sn), niobium (Nb), hafnium (Hf), zirconium (Zr), titanium(Ti), scandium (Sc), ruthenium (Ru), germanium (Ge), neodymium (Nd),iron (Fe), and combinations thereof; chromium nitride (CrN), boronnitride (BN), titanium nitride (TiN), zirconium nitride (ZrN), tantalumnitride (TaN), hafnium nitride (HfN), silicon nitride (SiN), aluminumnitride (AlN), hafnium nitride (HfN), niobium nitride (NbN), andcombinations thereof; indium oxide (In₂O₃), tin oxide (SnO₂), zinc oxide(ZnO), beryllium oxide (BeO), silicon oxide (SiO), iron oxide (FeO),titanium oxide (TiO), zirconium oxide (ZrO), tantalum oxide (TaO),manganese oxide (MnO), cadmium oxide (CdO), magnesium oxide (MgO),hafnium oxide (HfO), aluminum oxide (AlO), yttrium oxide (YO), chromiumoxide (CrO), strontium oxide (SrO), niobium oxide (NbO), andcombinations thereof; tantalum carbide (TaC), uranium carbide (UC),hafnium carbide (HfC), zirconium carbide (ZrC), scandium carbide (ScC),manganese carbide (MnC), iron carbide (FeC), niobium carbide (NbC),technetium carbide (TcC), rhenium carbide (ReC), vanadium carbide (VC),tungsten carbide (WC), titanium carbide (TiC), chromium carbide (CrC),cobalt carbide (CoC), nickel carbide (NiC), yttrium carbide (YC),molybdenum carbide (MoC), silicon carbide (SiC), hydrogenated siliconcarbide (SiC:H), and combinations thereof; and zirconium sulfides, zincsulfides, titanium sulfides, cobalt sulfides, silver sulfides, coppersulfides, indium sulfides, cadmium sulfides, tin sulfides, bismuthsulfides, lead sulfides, selenium sulfides, iron sulfides, molybdenumsulfides, and combinations thereof.
 14. The device according to claim11, wherein the at least one intermixing layer has a thickness fromabout 0.1 nm to about 100 nm.
 15. The device according to claim 11,wherein the at least one intermixing layer has a composition gradientacross the intermixing layer from a first surface of the intermixinglayer to a second opposing surface of the intermixing layer.
 16. Thedevice according to claim 11, wherein the overlying structure comprisesa dielectric material.
 17. The device according to claim 11, wherein theat least one intermixing layer is positioned on at least four surfacesof the peg.
 18. A device comprising: an energy source; a near fieldtransducer (NFT), the NFT configured to receive energy from the energysource, the NFT comprising a peg having five surfaces, the pegcomprising a first material, the first material comprising gold (Au),silver (Ag), aluminum (Al), copper (Cu), ruthenium (Ru), rhodium (Rh),iridium (Ir), or combinations thereof; an overlying structure; and atleast one intermixing layer, positioned between the peg and theoverlying structure, the at least one intermixing layer positioned on atleast one of the five surfaces of the peg, the intermixing layercomprising at least the first material and a second material.
 19. Thedevice according to claim 18, wherein the energy source comprises alaser.
 20. The device according to claim 18 further comprising awaveguide, the waveguide configured to receive the energy from theenergy source and couple it into the NFT.